On impact ionization and avalanche in gallium nitride

impact ionization avalanche in p - type diamond

Electrical conductivity of a highly boron doped chemical vapor deposited diamond thin film has been studied at different temperatures under high electric field conditions. Current-voltage characteristics have been measured using pulsed technique to reduce thermal effects. Experimental results evidence deep impurity impact ionization avalanche in p-type diamond up to room temperature.

Gallium Nitride Photoconductive Detectors

Since 1994, the Applied Physics Laboratory has been collaborating with NASA Goddard Space Flight Center to develop photodetectors based on gallium nitride and aluminum gallium nitride material produced in the Milton S. Eisenhower Research and Technology Development Center. This article describes the results of our collaboration and highlights the development of gallium nitride photodetectors wi...

Carrier Localization in Gallium Nitride

In wide bandgap GaN a large number of interesting and important scientific questions remain to be answered. For example, the large free electron concentration reaching 1019 to 1020 cm-3 in nominally undoped material are ascribed to intrinsic defects because no chemical impurity has been found at such high concentrations. According to theoretical models a nitrogen vacancy acts as a donor but its...

Experimental evaluation of impact ionization in dilute nitride GaInNAs diodes

the impact of e-readiness on ec success in public sector in iran the impact of e-readiness on ec success in public sector in iran

acknowledge the importance of e-commerce to their countries and to survival of their businesses and in creating and encouraging an atmosphere for the wide adoption and success of e-commerce in the long term. the investment for implementing e-commerce in the public sector is one of the areas which is focused in government‘s action plan for cross-disciplinary it development and e-readiness in go...